All MOSFET. 4N60KL-TF3-T Datasheet

 

4N60KL-TF3-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: 4N60KL-TF3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.4 nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F

 4N60KL-TF3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4N60KL-TF3-T Datasheet (PDF)

 ..1. Size:491K  utc
4n60kl-ta3-t 4n60kg-ta3-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tf1-t 4n60kg-tf1-t 4n60kl-tf2-t.pdf

4N60KL-TF3-T
4N60KL-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 ..2. Size:238K  utc
4n60kl-ta3-t 4n60kg-ta3-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tf1-t 4n60kg-tf1-t 4n60kl-tf2-t 4n60kg-tf2-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tm3-t 4n60kg-tm3-t.pdf

4N60KL-TF3-T
4N60KL-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

 4.1. Size:491K  utc
4n60kl-tf3t-t 4n60kg-tf3t-t 4n60kl-tm3-t 4n60kg-tm3-t 4n60kl-tn3-r 4n60kg-tn3-r 4n60kg-tf2-t.pdf

4N60KL-TF3-T
4N60KL-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 6.1. Size:238K  utc
4n60kl-tms-t 4n60kg-tms-t 4n60kl-tms2-t 4n60kg-tms2-t 4n60kl-tms4-t 4n60kg-tms4-t 4n60kl-tn3-r 4n60kg-tn3-r 4n60kl-tnd-r 4n60kg-tnd-r.pdf

4N60KL-TF3-T
4N60KL-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

 9.1. Size:361K  utc
4n60k.pdf

4N60KL-TF3-T
4N60KL-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220F TO-220F1The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp

 9.2. Size:4720K  goford
g4n60k.pdf

4N60KL-TF3-T
4N60KL-TF3-T

GOFORDG4N60K5N60Features Application 600V, 4A High frequency switching mode power supply R = 2.0 (Typ.) @ V = 10V Uninterruptible Power Supply (UPS) DS(ON) GS Fast switching Electronic ballast 100% avalanche tested Improved dv/dt capability RoHS CompliantPackage TO-252 Ordering Information Part Number Marking Case Packaging

 9.3. Size:958K  samwin
swf4n60k swi4n60k swd4n60k.pdf

4N60KL-TF3-T
4N60KL-TF3-T

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 600V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V RDS(ON) : 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3

 9.4. Size:650K  samwin
sw4n60k.pdf

4N60KL-TF3-T
4N60KL-TF3-T

SAMWIN SW4N60K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.15 RDS(ON) (Max 1.15)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

 9.5. Size:722K  microne
mem4n60thdg mem4n60thg mem4n60k3g mem4n60a3g.pdf

4N60KL-TF3-T
4N60KL-TF3-T

MEM4N60 N-CHANNEL POWER MOSFET MEM4N60 General Description Features 600V4A Switching regulator application. RDS(ON)=2.3@VGS=10V High voltage and high speed. LOW CRSS Switching application. FAST SWITCHING PACKAGE :TO251,TO251S,TO252,TO-220F Pin Configuration MEM4N60THDG MEM4N60THG MEM4N60K3G MEM4N60A3G Maximum Ratings (Ta=25) P

 9.6. Size:753K  cn hmsemi
hm4n60k hm4n60i.pdf

4N60KL-TF3-T
4N60KL-TF3-T

HM4N60K / HM4N60IHM4N60K / HM4N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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