All MOSFET. 4N60KL-TND-R Datasheet

 

4N60KL-TND-R Datasheet and Replacement


   Type Designator: 4N60KL-TND-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO252
 

 4N60KL-TND-R substitution

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4N60KL-TND-R Datasheet (PDF)

 ..1. Size:238K  utc
 4n60kl-tms-t 4n60kg-tms-t 4n60kl-tms2-t 4n60kg-tms2-t 4n60kl-tms4-t 4n60kg-tms4-t 4n60kl-tn3-r 4n60kg-tn3-r 4n60kl-tnd-r 4n60kg-tnd-r.pdf pdf_icon

4N60KL-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

 5.1. Size:491K  utc
 4n60kl-tf3t-t 4n60kg-tf3t-t 4n60kl-tm3-t 4n60kg-tm3-t 4n60kl-tn3-r 4n60kg-tn3-r 4n60kg-tf2-t.pdf pdf_icon

4N60KL-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 6.1. Size:491K  utc
 4n60kl-ta3-t 4n60kg-ta3-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tf1-t 4n60kg-tf1-t 4n60kl-tf2-t.pdf pdf_icon

4N60KL-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 6.2. Size:238K  utc
 4n60kl-ta3-t 4n60kg-ta3-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tf1-t 4n60kg-tf1-t 4n60kl-tf2-t 4n60kg-tf2-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tm3-t 4n60kg-tm3-t.pdf pdf_icon

4N60KL-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

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Datasheet: 4N60KL-TN3-R , 4N60KG-TN3-R , 4N60KL-TMS-T , 4N60KG-TMS-T , 4N60KL-TMS2-T , 4N60KG-TMS2-T , 4N60KL-TMS4-T , 4N60KG-TMS4-T , IRFP260 , 4N60KG-TND-R , 4N60L-TA3-T , 4N60G-TA3-T , 4N60L-TF1-T , 4N60G-TF1-T , 4N60L-TF2-T , 4N60G-TF2-T , 4N60L-TF3-T .

History: JVL102T

Keywords - 4N60KL-TND-R MOSFET datasheet

 4N60KL-TND-R cross reference
 4N60KL-TND-R equivalent finder
 4N60KL-TND-R lookup
 4N60KL-TND-R substitution
 4N60KL-TND-R replacement

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