All MOSFET. 4N60G-TND-R Datasheet

 

4N60G-TND-R Datasheet and Replacement


   Type Designator: 4N60G-TND-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO252
 

 4N60G-TND-R substitution

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4N60G-TND-R Datasheet (PDF)

 ..1. Size:441K  utc
 4n60l-tm3-t 4n60g-tm3-t 4n60l-tms-t 4n60g-tms-t 4n60l-tn3-r 4n60g-tn3-r 4n60l-tnd-r 4n60g-tnd-r 4n60l-t2q-t 4n60g-t2q-t 4n60l-tq2-t 4n60g-tq2-t.pdf pdf_icon

4N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication

 7.1. Size:441K  utc
 4n60l-ta3-t 4n60g-ta3-t 4n60l-tf1-t 4n60g-tf1-t 4n60l-tf2-t 4n60g-tf2-t 4n60l-tf3-t 4n60g-tf3-t 4n60l-tf3t-t 4n60g-tf3t-t 4n60l-tq2-r 4n60g-tq2-r.pdf pdf_icon

4N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication

 9.1. Size:342K  infineon
 sgp04n60 sgd04n60g.pdf pdf_icon

4N60G-TND-R

SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25

 9.2. Size:1148K  infineon
 skb04n60g.pdf pdf_icon

4N60G-TND-R

SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

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Datasheet: 4N60G-TQ2-R , 4N60L-TM3-T , 4N60G-TM3-T , 4N60L-TMS-T , 4N60G-TMS-T , 4N60L-TN3-R , 4N60G-TN3-R , 4N60L-TND-R , 4N60 , 4N60L-T2Q-T , 4N60G-T2Q-T , 4N60L-TQ2-T , 4N60G-TQ2-T , 4N65KG-TM3-T , 4N65KL-TMS-T , 4N65KG-TMS-T , 4N65KL-TMS2-T .

Keywords - 4N60G-TND-R MOSFET datasheet

 4N60G-TND-R cross reference
 4N60G-TND-R equivalent finder
 4N60G-TND-R lookup
 4N60G-TND-R substitution
 4N60G-TND-R replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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