4N65KL-T60-K
MOSFET. Datasheet pdf. Equivalent
Type Designator: 4N65KL-T60-K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8
Ohm
Package:
TO126
4N65KL-T60-K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
4N65KL-T60-K
Datasheet (PDF)
6.1. Size:302K utc
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3-t.pdf 
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
6.2. Size:302K utc
4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kg-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
6.7. Size:334K utc
4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kg-t2q-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1TO-220FTO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1rugged avalanche characteristic. This power MOSFET is 1usually used in high spee
6.10. Size:334K utc
4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kl-t2q-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1TO-220FTO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1rugged avalanche characteristic. This power MOSFET is 1usually used in high spee
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
