FDD8878 Datasheet. Specs and Replacement

Type Designator: FDD8878  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO252 DPAK

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FDD8878 substitution

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FDD8878 datasheet

 ..1. Size:400K  fairchild semi
fdd8878 fdu8878 fdu8878.pdf pdf_icon

FDD8878

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m , VGS = 4.5V, ID = 35A controllers. It has been optim... See More ⇒

 ..2. Size:400K  onsemi
fdd8878 fdu8878.pdf pdf_icon

FDD8878

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m , VGS = 4.5V, ID = 35A controllers. It has been optim... See More ⇒

 8.1. Size:331K  fairchild semi
fdd8870 f085.pdf pdf_icon

FDD8878

Jan 2013 FDD8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A controllers. It has been optimized for l... See More ⇒

 8.2. Size:486K  fairchild semi
fdd8870 fdu8870.pdf pdf_icon

FDD8878

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

Detailed specifications: FDD8870, STT01L07, FDD8870F085, STS8816, FDD8874, STS6N20, FDD8876, STS6604L, IRFP250, STS6601, FDD8880, STS6415, FDD8882, STS6409, FDD8896, STS6308, FDD8896F085

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