4N65L-TF1-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 4N65L-TF1-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 100 nC
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220F
4N65L-TF1-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
4N65L-TF1-T Datasheet (PDF)
4n65l-ta3-t 4n65g-ta3-t 4n65l-tf1-t 4n65g-tf1-t 4n65l-tf2-t 4n65g-tf2-t 4n65l-tf3-t 4n65g-tf3-t 4n65l-tf3t-t 4n65g-tf3t-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu
4n65l-t2q-t 4n65g-t2q-t 4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-e-k08-5060-r 4n65l-tm3-t 4n65g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu
4n65l-tms-t 4n65g-tms-t 4n65l-tms2-t 4n65g-tms2-t 4n65l-tms4-t 4n65g-tms4-t 4n65l-tn3-r 4n65g-tn3-r 4n65l-tnd-r 4n65g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu
4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-k08-5060-r 4n65g-k08-5060-r 4n65l-t2q-t 4n65g-t2q-t 4n65l-tm3-t 4n65g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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