4N70KG-TM3-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 4N70KG-TM3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
Package: TO251
4N70KG-TM3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
4N70KG-TM3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor
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UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor
4n70k.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor contr
sw4n70k.pdf
SAMWIN SW4N70K N-channel TO-251,TO-252 MOSFET TO-251 TO-252 Features BVDSS : 700V ID : 4A High ruggedness RDS(ON) (Max1.3)@VGS=10V RDS(ON) :1.3 Gate Charge (Typical 13nC) 1 Improved dv/dt Capability 1 2 2 3 3 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced
swf4n70k2 swn4n70k2 swd4n70k2.pdf
SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS :700V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.15)@VGS=10V RDS(ON) :1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S
swf4n70k swi4n70k swd4n70k.pdf
SW4N70K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 700V High ruggedness ID : 4A Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED, Adaptor 3 3 3 1. Gate 2. Drain 3. Source 1 3 G
hms4n70k hms4n70i.pdf
HMS4N70K,HMS4N70I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DStechnology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industrys ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: CS2N70HU
