4N70L-TA3-T Specs and Replacement
Type Designator: 4N70L-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO220
4N70L-TA3-T substitution
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4N70L-TA3-T datasheet
4n70l-ta3-t 4n70g-ta3-t 4n70l-tf1-t 4n70g-tf1-t 4n70l-tf3-t 4n70g-tf3-t 4n70l-tm3-t 4n70g-tm3-t 4n70l-tn3-r 4n70g-tn3-r 4n70l-t2q-t 4n70g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1 1 time, low gate charge, low on-state resistance and high rugged TO-252 avalanche. This high speed switching power MOSFET is usually TO-220... See More ⇒
swf4n70l swn4n70l swd4n70l.pdf
SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour... See More ⇒
Detailed specifications: 4N70KG-TMS-T, 4N70KL-TMS2-T, 4N70KG-TMS2-T, 4N70KL-TMS4-T, 4N70KG-TMS4-T, 4N70KL-TN3-R, 4N70KG-TN3-R, 4N70KL-TND-R, K4145, 4N70G-TA3-T, 4N70L-TF1-T, 4N70G-TF1-T, 4N70L-TF3-T, 4N70G-TF3-T, 4N70L-TM3-T, 4N70G-TM3-T, 4N70L-TN3-R
Keywords - 4N70L-TA3-T MOSFET specs
4N70L-TA3-T cross reference
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4N70L-TA3-T substitution
4N70L-TA3-T replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SRT045N025H | SM5A26NSF | NVMFD5C668NL | RSQ045N03 | MMDF1N05ER2G
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