All MOSFET. 4N70L-TA3-T Datasheet

 

4N70L-TA3-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: 4N70L-TA3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO220

 4N70L-TA3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4N70L-TA3-T Datasheet (PDF)

 ..1. Size:269K  utc
 4n70l-ta3-t 4n70g-ta3-t 4n70l-tf1-t 4n70g-tf1-t 4n70l-tf3-t 4n70g-tf3-t 4n70l-tm3-t 4n70g-tm3-t 4n70l-tn3-r 4n70g-tn3-r 4n70l-t2q-t 4n70g-t2q-t.pdf

4N70L-TA3-T 4N70L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 1TO-220 TO-220F DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 11time, low gate charge, low on-state resistance and high rugged TO-252avalanche. This high speed switching power MOSFET is usually TO-220

 9.1. Size:1046K  samwin
 swf4n70l swn4n70l swd4n70l.pdf

4N70L-TA3-T 4N70L-TA3-T

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V ID : 4A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application: LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IPB180N06S4-H1

 

 
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