4N70L-TM3-T Datasheet and Replacement
Type Designator: 4N70L-TM3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO251
4N70L-TM3-T substitution
4N70L-TM3-T Datasheet (PDF)
4n70l-ta3-t 4n70g-ta3-t 4n70l-tf1-t 4n70g-tf1-t 4n70l-tf3-t 4n70g-tf3-t 4n70l-tm3-t 4n70g-tm3-t 4n70l-tn3-r 4n70g-tn3-r 4n70l-t2q-t 4n70g-t2q-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 1TO-220 TO-220F DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 11time, low gate charge, low on-state resistance and high rugged TO-252avalanche. This high speed switching power MOSFET is usually TO-220
swf4n70l swn4n70l swd4n70l.pdf

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V ID : 4A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application: LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour
Datasheet: 4N70KG-TN3-R , 4N70KL-TND-R , 4N70L-TA3-T , 4N70G-TA3-T , 4N70L-TF1-T , 4N70G-TF1-T , 4N70L-TF3-T , 4N70G-TF3-T , AON7506 , 4N70G-TM3-T , 4N70L-TN3-R , 4N70G-TN3-R , 4N70L-T2Q-T , 4N70G-T2Q-T , 4N80L-TA3-T , 4N80G-TA3-T , 4N80L-TF1-T .
History: AP9477GM | AP9564GM-HF | NCEP0218K | 4835 | SVF31N30CSTR | BUK114-50L-S | 2SK1347
Keywords - 4N70L-TM3-T MOSFET datasheet
4N70L-TM3-T cross reference
4N70L-TM3-T equivalent finder
4N70L-TM3-T lookup
4N70L-TM3-T substitution
4N70L-TM3-T replacement
History: AP9477GM | AP9564GM-HF | NCEP0218K | 4835 | SVF31N30CSTR | BUK114-50L-S | 2SK1347



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