4N80G-TA3-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 4N80G-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220
4N80G-TA3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
4N80G-TA3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 11TO-251TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and 11DMOS technology. This technology is specialized in allowing a TO-220F1TO-262minimum on-state resistance, and superior switching per
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UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
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UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 11TO-220F1TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON)charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2* R 3.7 @ V =10V, I =2.0A DS(ON) GS D* Low
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UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 11TO-251TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and 11DMOS technology. This technology is specialized in allowing a TO-220F1TO-262minimum on-state resistance, and superior switching per
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