4N90G-TA3-T Specs and Replacement
Type Designator: 4N90G-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 188 nS
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO220
4N90G-TA3-T substitution
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4N90G-TA3-T datasheet
4n90l-ta3-t 4n90g-ta3-t 4n90l-tf3-t 4n90g-tf3-t 4n90l-tf1-t 4n90g-tf1-t 4n90l-tf2-t 4n90g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also ca... See More ⇒
4n90l-tf3t-t 4n90g-tf3t-t 4n90l-tm3-t 4n90g-tm3-t 4n90l-tn3-r 4n90g-tn3-r 4n90l-t3n-t 4n90g-t3n-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also ca... See More ⇒
Detailed specifications: 4N80G-TN3-R, 4N80L-TND-R, 4N80G-TND-R, 4N80L-TMA-T, 4N80G-TMA-T, 4N80L-TMA8-T, 4N80G-TMA8-T, 4N90L-TA3-T, 8N60, 4N90L-TF3-T, 4N90G-TF3-T, 4N90L-TF1-T, 4N90G-TF1-T, 4N90L-TF2-T, 4N90G-TF2-T, 4N90L-TF3T-T, 4N90G-TF3T-T
Keywords - 4N90G-TA3-T MOSFET specs
4N90G-TA3-T cross reference
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4N90G-TA3-T substitution
4N90G-TA3-T replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
