4N90L-TF3-T Specs and Replacement

Type Designator: 4N90L-TF3-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 188 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: TO220F

4N90L-TF3-T substitution

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4N90L-TF3-T datasheet

 ..1. Size:228K  utc
 4n90l-ta3-t 4n90g-ta3-t 4n90l-tf3-t 4n90g-tf3-t 4n90l-tf1-t 4n90g-tf1-t 4n90l-tf2-t 4n90g-tf2-t.pdf pdf_icon

4N90L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also ca... See More ⇒

 5.1. Size:228K  utc
 4n90l-tf3t-t 4n90g-tf3t-t 4n90l-tm3-t 4n90g-tm3-t 4n90l-tn3-r 4n90g-tn3-r 4n90l-t3n-t 4n90g-t3n-t.pdf pdf_icon

4N90L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also ca... See More ⇒

Detailed specifications: 4N80L-TND-R, 4N80G-TND-R, 4N80L-TMA-T, 4N80G-TMA-T, 4N80L-TMA8-T, 4N80G-TMA8-T, 4N90L-TA3-T, 4N90G-TA3-T, P60NF06, 4N90G-TF3-T, 4N90L-TF1-T, 4N90G-TF1-T, 4N90L-TF2-T, 4N90G-TF2-T, 4N90L-TF3T-T, 4N90G-TF3T-T, 4N90L-TM3-T

Keywords - 4N90L-TF3-T MOSFET specs

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