4N90L-T3N-T Datasheet and Replacement
Type Designator: 4N90L-T3N-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 188 nS
Cossⓘ - Output Capacitance: 49 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO3PN
4N90L-T3N-T substitution
4N90L-T3N-T Datasheet (PDF)
4n90l-tf3t-t 4n90g-tf3t-t 4n90l-tm3-t 4n90g-tm3-t 4n90l-tn3-r 4n90g-tn3-r 4n90l-t3n-t 4n90g-t3n-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFETadopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also ca
4n90l-ta3-t 4n90g-ta3-t 4n90l-tf3-t 4n90g-tf3-t 4n90l-tf1-t 4n90g-tf1-t 4n90l-tf2-t 4n90g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFETadopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also ca
Datasheet: 4N90L-TF2-T , 4N90G-TF2-T , 4N90L-TF3T-T , 4N90G-TF3T-T , 4N90L-TM3-T , 4N90G-TM3-T , 4N90L-TN3-R , 4N90G-TN3-R , 8N60 , 4N90G-T3N-T , 50N06L-TA3-T , 50N06G-TA3-T , 50N06L-TF3-T , 50N06G-TF3-T , 50N06L-TF3T-T , 50N06G-TF3T-T , 50N60L-TM3-T .
History: FDC697P | IPG20N06S2L-50A | MTP10N10E | IRLML6302TRPBF
Keywords - 4N90L-T3N-T MOSFET datasheet
4N90L-T3N-T cross reference
4N90L-T3N-T equivalent finder
4N90L-T3N-T lookup
4N90L-T3N-T substitution
4N90L-T3N-T replacement
History: FDC697P | IPG20N06S2L-50A | MTP10N10E | IRLML6302TRPBF
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