50N06G-TQ2-R Specs and Replacement

Type Designator: 50N06G-TQ2-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO263

50N06G-TQ2-R substitution

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50N06G-TQ2-R datasheet

 ..1. Size:333K  utc
 50n06l-tn3-r 50n06g-tn3-r 50n06l-tnd-r 50n06g-tnd-r 50n06l-tq2-t 50n06g-tq2-t 50n06l-tq2-r 50n06g-tq2-r.pdf pdf_icon

50N06G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 TO-251 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 1 It is mainly suitable electronic ... See More ⇒

 6.1. Size:333K  utc
 50n06l-ta3-t 50n06g-ta3-t 50n06l-tf3-t 50n06g-tf3-t 50n06l-tf3t-t 50n06g-tf3t-t 50n60l-tm3-t 50n60g-tm3-t.pdf pdf_icon

50N06G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 TO-251 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 1 It is mainly suitable electronic ... See More ⇒

 8.1. Size:418K  nell
 50n06a 50n06af 50n06f 50n06g.pdf pdf_icon

50N06G-TQ2-R

RoHS 50N06 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (50A, 60Volts) DESCRIPTION D The Nell 50N06 is a three-terminal silicon D device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. G S They are designed for use in applications ... See More ⇒

 8.2. Size:521K  chongqing pingwei
 50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf pdf_icon

50N06G-TQ2-R

50N06(F,B,H,G,D) 50 Amps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,R =17.5m @VGS=10V/25A DS(ON)MAX R =20m @VGS=4.5V/25A DS(ON)MAX Low gate charge Low C iss TO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capability TO-263 TO-252 TO-251 50N06B 50N06G 50N06D Absolute Maximum Ratings(T =25 ,unless otherwi... See More ⇒

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Detailed specifications: 50N60G-TM3-T, 50N06L-TN3-R, 50N06G-TN3-R, 50N06L-TND-R, 50N06G-TND-R, 50N06L-TQ2-T, 50N06G-TQ2-T, 50N06L-TQ2-R, IRF540N, 5N50L-TF3-T, 5N50G-TF3-T, 5N50L-TF1-T, 5N50G-TF1-T, 5N50L-TN3-R, 5N50G-TN3-R, 5N50L-T2Q-T, 5N50G-T2Q-T

Keywords - 50N06G-TQ2-R MOSFET specs

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