60N06L-TF3-T PDF and Equivalents Search

UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 18m @VGS = 10 V * Ultra low gate charge ( ... See More ⇒

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V) g Low thermal resistance ... See More ⇒

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V) g Low thermal resistance ... See More ⇒

NTP60N06L, NTB60N06L Power MOSFET 60 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in 60 AMPERES, 60 VOLTS power supplies, converters, power motor controls and bridge circuits. RDS(on) = 16 mW Features N-Channel Pb-Free Packages are Available D Typical Applications Power Supplies C... See More ⇒

Spec. No. C708L3 Issued Date 2009.05.26 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60V MTB60N06L3 ID 5.9A 41m (typ) RDSON@VGS=10V, ID=5A 46m (typ) RDSON@VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circui... See More ⇒