6N60KL-TF2-T Datasheet and Replacement
Type Designator: 6N60KL-TF2-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 23 nC
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 97 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
6N60KL-TF2-T substitution
6N60KL-TF2-T Datasheet (PDF)
6n60kl-ta3-t 6n60kg-ta3-t 6n60kl-tf3-t 6n60kg-tf3-t 6n60kl-tf1-t 6n60kg-tf1-t 6n60kl-tf2-t 6n60kg-tf2-t 6n60kl-tf3-t 6n60kg-tf3-t 6n60kl-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap
6n60kl-tms-t 6n60kg-tms-t 6n60kl-tms2-t 6n60kg-tms2-t 6n60kl-tms4-t 6n60kg-tms4-t 6n60kl-tn3-r 6n60kg-tn3-r 6n60kl-tnd-r 6n60kg-tnd-r 6n60kg-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap
swf6n60k.pdf

SW6N60K N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 600V TO-220F ID : 6A High ruggedness Low RDS(ON) (Typ 0.72)@VGS=10V RDS(ON) : 0.72 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 3 Application:Charger,LED 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is
swf16n60k.pdf

SW16N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 16A High ruggedness Low RDS(ON) (Typ 0.21)@VGS=10V RDS(ON) :0.21 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:LED, Charger, PC Power 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MO
Datasheet: 60N06L-TQ2-T , 60N06G-TQ2-T , 6N60KL-TA3-T , 6N60KG-TA3-T , 6N60KL-TF3-T , 6N60KG-TF3-T , 6N60KL-TF1-T , 6N60KG-TF1-T , RU6888R , 6N60KG-TF2-T , 6N60KL-TM3-T , 6N60KL-TMS-T , 6N60KG-TMS-T , 6N60KL-TMS2-T , 6N60KG-TMS2-T , 6N60KL-TMS4-T , 6N60KG-TMS4-T .
History: CTLM7110-M832D | NX7002AKW
Keywords - 6N60KL-TF2-T MOSFET datasheet
6N60KL-TF2-T cross reference
6N60KL-TF2-T equivalent finder
6N60KL-TF2-T lookup
6N60KL-TF2-T substitution
6N60KL-TF2-T replacement
History: CTLM7110-M832D | NX7002AKW



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