6N60KL-TF2-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 6N60KL-TF2-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 97 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
6N60KL-TF2-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
6N60KL-TF2-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap
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UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap
swf6n60k.pdf
SW6N60K N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 600V TO-220F ID : 6A High ruggedness Low RDS(ON) (Typ 0.72)@VGS=10V RDS(ON) : 0.72 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 3 Application:Charger,LED 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is
swf16n60k.pdf
SW16N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 16A High ruggedness Low RDS(ON) (Typ 0.21)@VGS=10V RDS(ON) :0.21 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:LED, Charger, PC Power 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MO
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CSFR6N60F,CSFR6N60KnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR6N60U,CSFR6N60D600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package In
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