6N65KG-TND-R MOSFET. Datasheet pdf. Equivalent
Type Designator: 6N65KG-TND-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.5 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 88 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO252D
6N65KG-TND-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
6N65KG-TND-R Datasheet (PDF)
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SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source
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