FDG6318PZ Datasheet. Specs and Replacement
Type Designator: FDG6318PZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: SC70
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FDG6318PZ substitution
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FDG6318PZ datasheet
fdg6318pz.pdf
January 2003 FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode -0.5A, -20V. rDS(ON) = 780m (Max)@ VGS = -4.5 V MOSFET are produced using Fairchild Semiconductor s rDS(ON) = 1200m (Max) @ VGS = -2.5 V especially tailored to minimize on-state resistance. This Very low level gate drive requirements allowing... See More ⇒
fdg6318p.pdf
January 2003 FDG6318P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode 0.5 A, 20 V. RDS(ON) = 780 m @ VGS = 4.5 V MOSFET are produced using Fairchild Semiconductor s RDS(ON) = 1200 m @ VGS = 2.5 V advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This... See More ⇒
fdg6317nz.pdf
May 2009 FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed 0.7 A, 20 V. RDS(ON) = 400 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 550 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized use Gate-So... See More ⇒
fdg6316p.pdf
December 2001 FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 0.7 A, 12 V. RDS(ON) = 270 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 360 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 650 m @ ... See More ⇒
Detailed specifications: FDG332PZ, FDG410NZ, FDG6301NF085, FDG6306P, FDG6308P, FDG6316P, FDG6317NZ, FDG6318P, IRFZ24N, FDG6320C, STS4501, FDG6321C, STS4300, FDG6322C, STS400, FDG6332C, STS3623
Keywords - FDG6318PZ MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: FDG330P | FDD8870F085 | FDD8444F085
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