6N80L-TA3-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 6N80L-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220
6N80L-TA3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
6N80L-TA3-T Datasheet (PDF)
..1. Size:192K utc
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UNISONIC TECHNOLOGIES CO., LTD 6N80 Power MOSFET 6.0A, 800V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe 1TO-220Fand DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. Italso can
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