6N80G-TF3-T Datasheet and Replacement
Type Designator: 6N80G-TF3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220F
6N80G-TF3-T substitution
6N80G-TF3-T Datasheet (PDF)
6n80l-ta3-t 6n80g-ta3-t 6n80l-tf3-t 6n80g-tf3-t 6n80l-tf1-t 6n80g-tf1-t 6n80l-t2q-t 6n80g-t2q-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 6N80 Power MOSFET 6.0A, 800V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe 1TO-220Fand DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. Italso can
ssf6n80g.pdf

SSF6N80G Main Product Characteristics: VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
Datasheet: 6N70KG-TMS4-T , 6N70KL-TN3-R , 6N70KG-TN3-R , 6N70KL-TND-R , 6N70KG-TND-R , 6N80L-TA3-T , 6N80G-TA3-T , 6N80L-TF3-T , 5N60 , 6N80L-TF1-T , 6N80G-TF1-T , 6N80L-T2Q-T , 6N80G-T2Q-T , 75N75L-TA3-T , 75N75G-TA3-T , 75N75L-TF1-T , 75N75G-TF1-T .
History: PE532DY | OSG60R1K8PF
Keywords - 6N80G-TF3-T MOSFET datasheet
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6N80G-TF3-T replacement
History: PE532DY | OSG60R1K8PF



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