6N80L-T2Q-T Datasheet and Replacement
Type Designator: 6N80L-T2Q-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO262
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6N80L-T2Q-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 6N80 Power MOSFET 6.0A, 800V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe 1TO-220Fand DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. Italso can
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 7N65G-TM3-T | 7409
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History: 7N65G-TM3-T | 7409



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