All MOSFET. 6N80L-T2Q-T Datasheet

 

6N80L-T2Q-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: 6N80L-T2Q-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO262

 6N80L-T2Q-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

6N80L-T2Q-T Datasheet (PDF)

 ..1. Size:192K  utc
 6n80l-ta3-t 6n80g-ta3-t 6n80l-tf3-t 6n80g-tf3-t 6n80l-tf1-t 6n80g-tf1-t 6n80l-t2q-t 6n80g-t2q-t.pdf

6N80L-T2Q-T 6N80L-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 6N80 Power MOSFET 6.0A, 800V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe 1TO-220Fand DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. Italso can

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MMDF3N02HDR2G | WMQ30N03T2 | VBMB1638 | KIA3308A-252 | NCE15H10A | PMDPB28UN | NTTFS6H850NL

 

 
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