All MOSFET. 7N60L-TQ2-T Datasheet

 

7N60L-TQ2-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: 7N60L-TQ2-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 210 nC
   Rise Time (tr): 180 nS
   Drain-Source Capacitance (Cd): 125 pF
   Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
   Package: TO263

 7N60L-TQ2-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

7N60L-TQ2-T Datasheet (PDF)

 ..1. Size:349K  utc
7n60l-tf3t-t 7n60g-tf3t-t 7n60l-t2q-t 7n60g-t2q-t 7n60l-tq2-t 7n60g-tq2-t 7n60l-tq2-r 7n60g-tq2-r.pdf

7N60L-TQ2-T
7N60L-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 7.1. Size:349K  utc
7n60l-ta3-t 7n60g-ta3-t 7n60l-tf3-t 7n60g-tf3-t 7n60l-tf1-t 7n60g-tf1-t 7n60l-tf2-t 7n60g-tf2-t.pdf

7N60L-TQ2-T
7N60L-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 9.1. Size:187K  utc
7n60l.pdf

7N60L-TQ2-T
7N60L-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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