7N65KG-TQ2-R MOSFET. Datasheet pdf. Equivalent

   Type Designator: 7N65KG-TQ2-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 180(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO263

7N65KG-TQ2-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

7N65KG-TQ2-R Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switch

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UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s

6.2. Size:264K utc
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UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of

6.3. Size:268K utc
7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tf2-t.pdf