7N65G-TQ2-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 7N65G-TQ2-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO263
7N65G-TQ2-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7N65G-TQ2-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.
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spc7n65g.pdf
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spe7n65g.pdf
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spd7n65g.pdf
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