7N65G-TQ2-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 7N65G-TQ2-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO263
7N65G-TQ2-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7N65G-TQ2-T Datasheet (PDF)
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spe7n65g.pdf
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spd7n65g.pdf
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