7N65G-TF3-T
MOSFET. Datasheet pdf. Equivalent
Type Designator: 7N65G-TF3-T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4
Ohm
Package:
TO220F
7N65G-TF3-T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7N65G-TF3-T
Datasheet (PDF)
..2. Size:342K utc
7n65l-t2q-t 7n65g-t2q-t 7n65l-tq2-r 7n65g-tq2-r 7n65l-tq2-t 7n65g-tq2-t 7n65g-tf3-t.pdf 
UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic
6.1. Size:342K utc
7n65l-ta3-t 7n65g-ta3-t 7n65l-tf1-t 7n65g-tf1-t 7n65l-tf2-t 7n65g-tf2-t 7n65l-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic
9.1. Size:979K feihonltd
fhp7n65g.pdf
N N-CHANNEL MOSFET FHP7N65G MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Improved dv/dt
9.2. Size:835K cn sinai power
spc7n65g.pdf
SPC7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appl
9.3. Size:900K cn sinai power
spe7n65g.pdf
SPE7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appli
9.4. Size:920K cn sinai power
spd7n65g.pdf
SPD7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appli
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
