7N65L-TA3-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 7N65L-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220
7N65L-TA3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7N65L-TA3-T Datasheet (PDF)
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7n65l-ta3-t 7n65g-ta3-t 7n65l-tf1-t 7n65g-tf1-t 7n65l-tf2-t 7n65g-tf2-t 7n65l-tf3-t.pdf
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UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic
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UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.
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UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
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APT97N65B2C6 APT97N65LC6 650V 97A 0.041APT97N65B2C6COOLMOSPower Semiconductors Super Junction MOSFET T-MaxTO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT97N65LC6 Extreme dv/dt RatedDGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
wfd7n65l.pdf
WFD7N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD 7A,650V,R (Max1.38)@V =10VDS(on) GS Low Crss (typical 15pF ) Fast Switching CapabilityG 100%Avalanche Tested Isolation Voltage (V =4000V AC)ISO Maximum Junction Temperature Range(150)SGeneral Description
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: JFPC8N60C
