7N65G-TF1-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 7N65G-TF1-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
7N65G-TF1-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7N65G-TF1-T Datasheet (PDF)
7n65l-ta3-t 7n65g-ta3-t 7n65l-tf1-t 7n65g-tf1-t 7n65l-tf3-t 7n65g-tf3-t 7n65l-tf3t-t 7n65g-tf3t-t 7n65l-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.
7n65l-ta3-t 7n65g-ta3-t 7n65l-tf1-t 7n65g-tf1-t 7n65l-tf2-t 7n65g-tf2-t 7n65l-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic
7n65l-t2q-t 7n65g-t2q-t 7n65l-tq2-r 7n65g-tq2-r 7n65l-tq2-t 7n65g-tq2-t 7n65g-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic
7n65l-tn3-r 7n65g-tn3-r 7n65l-t2q-t 7n65g-t2q-t 7n65l-tq2-t 7n65g-tq2-t 7n65l-tq2-r 7n65g-tq2-r 7n65g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.
fhp7n65g.pdf
N N-CHANNEL MOSFET FHP7N65G MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Improved dv/dt
spc7n65g.pdf
SPC7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appl
spe7n65g.pdf
SPE7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appli
spd7n65g.pdf
SPD7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appli
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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