7N65G-TN3-R MOSFET. Datasheet pdf. Equivalent
Type Designator: 7N65G-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17.5 nS
Cossⓘ - Output Capacitance: 96 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
7N65G-TN3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7N65G-TN3-R Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.
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UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.
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UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic
7n65l-ta3-t 7n65g-ta3-t 7n65l-tf1-t 7n65g-tf1-t 7n65l-tf2-t 7n65g-tf2-t 7n65l-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
