7NM65G-T2Q-T MOSFET Datasheet: N-Ch, 650V, 7A. Full specification with pinout and replacement list

7NM65G-T2Q-T Specs and Replacement

Type Designator: 7NM65G-T2Q-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 238 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO262

7NM65G-T2Q-T substitution

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7NM65G-T2Q-T datasheet

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UNISONIC TECHNOLOGIES CO., LTD 7NM65 Power MOSFET 7.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM65 is a Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 7NM65 is universally applied in electronic lamp ballasts based on half bri... See More ⇒

6.1. Size:223K utc
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