7NM70L-TM3-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 7NM70L-TM3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 223 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO251
7NM70L-TM3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7NM70L-TM3-T Datasheet (PDF)
7nm70l-tf3t-t 7nm70g-tf3t-t 7nm70l-tm3-t 7nm70g-tm3-t 7nm70l-tms2-t 7nm70g-tms2-t 7nm70l-tmn2-t 7nm70g-tmn2-t 7nm70g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 7NM70 Power MOSFET 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM70 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converte
7nm70l-ta3-t 7nm70g-ta3-t 7nm70l-tf3-t 7nm70g-tf3-t 7nm70l-tf1-t 7nm70g-tf1-t 7nm70l-tf2-t 7nm70g-tf2-t 7nm70l-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 7NM70 Power MOSFET 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM70 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converte
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: FQU3N60TU
