7NM70G-TMN2-T Datasheet and Replacement
Type Designator: 7NM70G-TMN2-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 223 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO251NS
7NM70G-TMN2-T Datasheet (PDF)
7nm70l-tf3t-t 7nm70g-tf3t-t 7nm70l-tm3-t 7nm70g-tm3-t 7nm70l-tms2-t 7nm70g-tms2-t 7nm70l-tmn2-t 7nm70g-tmn2-t 7nm70g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 7NM70 Power MOSFET 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM70 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converte
7nm70l-ta3-t 7nm70g-ta3-t 7nm70l-tf3-t 7nm70g-tf3-t 7nm70l-tf1-t 7nm70g-tf1-t 7nm70l-tf2-t 7nm70g-tf2-t 7nm70l-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 7NM70 Power MOSFET 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM70 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converte
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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