9N90G-TC3-T Specs and Replacement
Type Designator: 9N90G-TC3-T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO230
9N90G-TC3-T substitution
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9N90G-TC3-T datasheet
9n90l-tc3-t 9n90g-tc3-t 9n90l-tf1-t 9n90g-tf1-t 9n90l-tf2-t 9n90g-tf2-t 9n90l-t3p-t 9n90g-t3p-t 9n90l-t3n-t 9n90g-t3n-t 9n90l-t47-t 9n90g-t47-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ... See More ⇒
ssm09n90gw.pdf
SSM09N90GW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N90GW acheives fast switching performance BVDSS 900V with low gate charge without a complex drive circuit. It is RDS(ON) 1.2 suitable for high voltage applications such as AC/DC converters and offline power supplies. I 8.6A D The SSM09N90GW is in a TO-247 (TO-3P) package, Pb-free; RoHS-compli... See More ⇒
Detailed specifications: 8N80G-TA3-T, 8N80L-TF3-T, 8N80G-TF3-T, 8N80L-TF1-T, 8N80G-TF1-T, 8N80L-TF2-T, 8N80G-TF2-T, 9N90L-TC3-T, K2611, 9N90L-TF1-T, 9N90G-TF1-T, 9N90L-TF2-T, 9N90G-TF2-T, 9N90L-T3P-T, 9N90G-T3P-T, 9N90L-T3N-T, 9N90G-T3N-T
Keywords - 9N90G-TC3-T MOSFET specs
9N90G-TC3-T cross reference
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9N90G-TC3-T replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SSF2356G8 | STN2302 | 7N60G-TF1-T
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