UF3205L-TQ2-T MOSFET. Datasheet pdf. Equivalent
Type Designator: UF3205L-TQ2-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 146(max) nC
trⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 781 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
UF3205L-TQ2-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UF3205L-TQ2-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET 11TO-3P TO-247 DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. 11
uf3205.pdf
UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. FEATURES * RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918