All MOSFET. UF3205G-TQ2-R Datasheet

 

UF3205G-TQ2-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UF3205G-TQ2-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 146(max) nC
   trⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 781 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263

 UF3205G-TQ2-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UF3205G-TQ2-R Datasheet (PDF)

 ..1. Size:228K  utc
 uf3205l-ta3-t uf3205g-ta3-t uf3205l-t3p-t uf3205g-t3p-t uf3205l-t47-t uf3205g-t47-t uf3205l-tq2-t uf3205g-tq2-t uf3205l-tq2-r uf3205g-tq2-r.pdf

UF3205G-TQ2-R UF3205G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET 11TO-3P TO-247 DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. 11

 8.1. Size:201K  utc
 uf3205.pdf

UF3205G-TQ2-R UF3205G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. FEATURES * RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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