All MOSFET. UF640L-TF2-T Datasheet

 

UF640L-TF2-T Datasheet and Replacement


   Type Designator: UF640L-TF2-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 89 nC
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

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UF640L-TF2-T Datasheet (PDF)

 ..1. Size:269K  utc
 uf640g-aa3-r uf640l-ta3-t uf640g-ta3-t uf640l-tf1-t uf640g-tf1-t uf640l-tf2-t uf640g-tf2-t uf640l-tf3-t uf640g-tf3-t.pdf pdf_icon

UF640L-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

 6.1. Size:269K  utc
 uf640l-tn3-r uf640g-tn3-r uf640l-t2q-t uf640g-t2q-t uf640l-t2q-r uf640g-t2q-r uf640l-tq2-t uf640g-tq2-t uf640l-tq2-r uf640g-tq2-r.pdf pdf_icon

UF640L-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

 9.1. Size:244K  utc
 uf640.pdf pdf_icon

UF640L-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

 9.2. Size:368K  cet
 ceuf640 cedf640.pdf pdf_icon

UF640L-TF2-T

CEDF640/CEUF640N-Channel Enhancement Mode Field Effect TransistorFEATURES200V, 15A, RDS(ON) = 0.15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

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Datasheet: UF630L-T2Q-T , UF630G-T2Q-T , UF630G-S08-R , UF640G-AA3-R , UF640L-TA3-T , UF640G-TA3-T , UF640L-TF1-T , UF640G-TF1-T , AO3400 , UF640G-TF2-T , UF640L-TF3-T , UF640G-TF3-T , UF640L-TN3-R , UF640G-TN3-R , UF640L-T2Q-T , UF640G-T2Q-T , UF640L-T2Q-R .

Keywords - UF640L-TF2-T MOSFET datasheet

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 UF640L-TF2-T equivalent finder
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 UF640L-TF2-T replacement

 

 
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