UF640L-TQ2-T Datasheet and Replacement
Type Designator: UF640L-TQ2-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
UF640L-TQ2-T substitution
UF640L-TQ2-T Datasheet (PDF)
uf640l-tn3-r uf640g-tn3-r uf640l-t2q-t uf640g-t2q-t uf640l-t2q-r uf640g-t2q-r uf640l-tq2-t uf640g-tq2-t uf640l-tq2-r uf640g-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an
uf640g-aa3-r uf640l-ta3-t uf640g-ta3-t uf640l-tf1-t uf640g-tf1-t uf640l-tf2-t uf640g-tf2-t uf640l-tf3-t uf640g-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an
uf640.pdf

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an
ceuf640 cedf640.pdf

CEDF640/CEUF640N-Channel Enhancement Mode Field Effect TransistorFEATURES200V, 15A, RDS(ON) = 0.15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth
Datasheet: UF640L-TF3-T , UF640G-TF3-T , UF640L-TN3-R , UF640G-TN3-R , UF640L-T2Q-T , UF640G-T2Q-T , UF640L-T2Q-R , UF640G-T2Q-R , 4435 , UF640G-TQ2-T , UF640L-TQ2-R , UF640G-TQ2-R , UF740L-TA3-T , UF740G-TA3-T , UF740L-TF1-T , UF740G-TF1-T , UF740L-TF2-T .
History: SVF7N65CT | IXTP2N65X2
Keywords - UF640L-TQ2-T MOSFET datasheet
UF640L-TQ2-T cross reference
UF640L-TQ2-T equivalent finder
UF640L-TQ2-T lookup
UF640L-TQ2-T substitution
UF640L-TQ2-T replacement
History: SVF7N65CT | IXTP2N65X2



LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324 | 2sc1904 | 2sc281