UF640G-TQ2-R Specs and Replacement

Type Designator: UF640G-TQ2-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO263

UF640G-TQ2-R substitution

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UF640G-TQ2-R datasheet

 ..1. Size:269K  utc
 uf640l-tn3-r uf640g-tn3-r uf640l-t2q-t uf640g-t2q-t uf640l-t2q-r uf640g-t2q-r uf640l-tq2-t uf640g-tq2-t uf640l-tq2-r uf640g-tq2-r.pdf pdf_icon

UF640G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an... See More ⇒

 6.1. Size:269K  utc
 uf640g-aa3-r uf640l-ta3-t uf640g-ta3-t uf640l-tf1-t uf640g-tf1-t uf640l-tf2-t uf640g-tf2-t uf640l-tf3-t uf640g-tf3-t.pdf pdf_icon

UF640G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an... See More ⇒

 9.1. Size:244K  utc
 uf640.pdf pdf_icon

UF640G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an... See More ⇒

 9.2. Size:368K  cet
 ceuf640 cedf640.pdf pdf_icon

UF640G-TQ2-R

CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth... See More ⇒

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Detailed specifications: UF640G-TN3-R, UF640L-T2Q-T, UF640G-T2Q-T, UF640L-T2Q-R, UF640G-T2Q-R, UF640L-TQ2-T, UF640G-TQ2-T, UF640L-TQ2-R, AON6380, UF740L-TA3-T, UF740G-TA3-T, UF740L-TF1-T, UF740G-TF1-T, UF740L-TF2-T, UF740G-TF2-T, UF740L-TF3-T, UF740G-TF3-T

Keywords - UF640G-TQ2-R MOSFET specs

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 UF640G-TQ2-R replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs