UF830L-TF1-T Specs and Replacement
Type Designator: UF830L-TF1-T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220F
UF830L-TF1-T substitution
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UF830L-TF1-T datasheet
uf830l-ta3-t uf830g-ta3-t uf830l-tf3-t uf830g-tf3-t uf830l-tf1-t uf830g-tf1-t uf830l-tf2-t uf830g-tf2-t uf830l-tm3-t uf830g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5 , N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)... See More ⇒
uf830l-tms-t uf830g-tms-t uf830l-tn3-r uf830g-tn3-r uf830l-t2q-t uf830g-t2q-t uf830l-tq2-r uf830g-tq2-r uf830l-tq2-t uf830g-tq2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5 , N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)... See More ⇒
uf830z.pdf
UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5 , N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220F designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID = ... See More ⇒
uf830.pdf
UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5 , N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220F designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 FEATURES TO-220F1 * 4.... See More ⇒
Detailed specifications: UF830KL-TF2-T, UF830KG-TF2-T, UF830KL-TN3-R, UF830KG-TN3-R, UF830L-TA3-T, UF830G-TA3-T, UF830L-TF3-T, UF830G-TF3-T, 2N60, UF830G-TF1-T, UF830L-TF2-T, UF830G-TF2-T, UF830L-TM3-T, UF830G-TM3-T, UF830L-TMS-T, UF830G-TMS-T, UF830L-TN3-R
Keywords - UF830L-TF1-T MOSFET specs
UF830L-TF1-T cross reference
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UF830L-TF1-T substitution
UF830L-TF1-T replacement
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