All MOSFET. UF830G-TN3-R Datasheet

 

UF830G-TN3-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UF830G-TN3-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252

 UF830G-TN3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UF830G-TN3-R Datasheet (PDF)

 ..1. Size:315K  utc
 uf830l-tms-t uf830g-tms-t uf830l-tn3-r uf830g-tn3-r uf830l-t2q-t uf830g-t2q-t uf830l-tq2-r uf830g-tq2-r uf830l-tq2-t uf830g-tq2-t.pdf

UF830G-TN3-R UF830G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 6.1. Size:315K  utc
 uf830l-ta3-t uf830g-ta3-t uf830l-tf3-t uf830g-tf3-t uf830l-tf1-t uf830g-tf1-t uf830l-tf2-t uf830g-tf2-t uf830l-tm3-t uf830g-tm3-t.pdf

UF830G-TN3-R UF830G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.1. Size:274K  utc
 uf830z.pdf

UF830G-TN3-R UF830G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers andrelated drivers. FEATURES * VDS = 500V * ID =

 9.2. Size:284K  utc
 uf830.pdf

UF830G-TN3-R UF830G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 FEATURES TO-220F1* 4.

 9.3. Size:251K  utc
 uf830kl-ta3-t uf830kg-ta3-t uf830kl-tf3-t uf830kg-tf3-t uf830kl-tf2-t uf830kg-tf2-t uf830kl-tn3-r uf830kg-tn3-r.pdf

UF830G-TN3-R UF830G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F FEATURES *

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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