All MOSFET. UF840KL-TA3-R Datasheet

 

UF840KL-TA3-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UF840KL-TA3-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 11.6 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.87 Ohm
   Package: TO220

 UF840KL-TA3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UF840KL-TA3-R Datasheet (PDF)

 ..1. Size:376K  utc
 uf840kl-ta3-r uf840kg-ta3-r uf840kl-tf3-r uf840kg-tf3-r uf840kl-tf1-t uf840kg-tf1-t uf840kl-tn3-r uf840kg-tn3-r uf840kl-tq2-t uf840kg-tq2-t uf840kl-tq2-r uf840kg-tq2-r.pdf

UF840KL-TA3-R UF840KL-TA3-R

UNISONIC TECHNOLOGIES CO., LTD UF840K-MTQ Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)

 9.1. Size:426K  utc
 uf840.pdf

UF840KL-TA3-R UF840KL-TA3-R

UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)=0.85 * Single Pulse Ava

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top