All MOSFET. UF840KG-TN3-R Datasheet

 

UF840KG-TN3-R Datasheet and Replacement


   Type Designator: UF840KG-TN3-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11.6 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.87 Ohm
   Package: TO252
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UF840KG-TN3-R Datasheet (PDF)

 ..1. Size:376K  utc
 uf840kl-ta3-r uf840kg-ta3-r uf840kl-tf3-r uf840kg-tf3-r uf840kl-tf1-t uf840kg-tf1-t uf840kl-tn3-r uf840kg-tn3-r uf840kl-tq2-t uf840kg-tq2-t uf840kl-tq2-r uf840kg-tq2-r.pdf pdf_icon

UF840KG-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UF840K-MTQ Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)

 9.1. Size:426K  utc
 uf840.pdf pdf_icon

UF840KG-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)=0.85 * Single Pulse Ava

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | BUK625R0-40C | IRFBG20 | DMP2104LP

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