All MOSFET. UF840KL-TQ2-T Datasheet

 

UF840KL-TQ2-T Datasheet and Replacement


   Type Designator: UF840KL-TQ2-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11.6 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.87 Ohm
   Package: TO263
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UF840KL-TQ2-T Datasheet (PDF)

 ..1. Size:376K  utc
 uf840kl-ta3-r uf840kg-ta3-r uf840kl-tf3-r uf840kg-tf3-r uf840kl-tf1-t uf840kg-tf1-t uf840kl-tn3-r uf840kg-tn3-r uf840kl-tq2-t uf840kg-tq2-t uf840kl-tq2-r uf840kg-tq2-r.pdf pdf_icon

UF840KL-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD UF840K-MTQ Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)

 9.1. Size:426K  utc
 uf840.pdf pdf_icon

UF840KL-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)=0.85 * Single Pulse Ava

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BUK661R9-40C | IXTU4N60P | IRFB3607G | HP16N10 | HGW130N12S | SML5040AN | BLF7G21L-160P

Keywords - UF840KL-TQ2-T MOSFET datasheet

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