All MOSFET. UT100N03G-TF3-T Datasheet

 

UT100N03G-TF3-T Datasheet and Replacement


   Type Designator: UT100N03G-TF3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO220F
 

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UT100N03G-TF3-T Datasheet (PDF)

 0.1. Size:364K  utc
 ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf pdf_icon

UT100N03G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 3.1. Size:364K  utc
 ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf pdf_icon

UT100N03G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 6.1. Size:261K  utc
 ut100n03-q.pdf pdf_icon

UT100N03G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m@VGS=10 V * RDS(ON) = 8.0m@VGS=4.

 6.2. Size:268K  utc
 ut100n03.pdf pdf_icon

UT100N03G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 11TO-220 TO-251 DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with 1low gate voltages. This device is suitable for use as a load 1switch or in PWM applications. TO-252TO-263 FEATURES * RDS(ON)= 5.3m

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Datasheet: UML2502L-AE3-R , UML2502G-AE3-R , UP9971L-D08-T , UP9971G-D08-T , UP9971G-S08-R , UT100N03L-TA3-T , UT100N03G-TA3-T , UT100N03L-TF3-T , IRFP260N , UT100N03L-TM3-T , UT100N03G-TM3-T , UT100N03L-TN3-R , UT100N03G-TN3-R , UT100N03L-TND-R , UT100N03G-TND-R , UT100N03L-TQ2-T , UT100N03G-TQ2-T .

History: 2SK3608-01SJ | SIJ478DP | 2SK3434 | UT3409 | 2SK4067I | PNM523T703E0-2 | BLP032N08-T

Keywords - UT100N03G-TF3-T MOSFET datasheet

 UT100N03G-TF3-T cross reference
 UT100N03G-TF3-T equivalent finder
 UT100N03G-TF3-T lookup
 UT100N03G-TF3-T substitution
 UT100N03G-TF3-T replacement

 

 
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