UT100N03G-TQ2-T Specs and Replacement

Type Designator: UT100N03G-TQ2-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO263

UT100N03G-TQ2-T substitution

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UT100N03G-TQ2-T datasheet

 0.1. Size:364K  utc
 ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf pdf_icon

UT100N03G-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON) ... See More ⇒

 3.1. Size:364K  utc
 ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf pdf_icon

UT100N03G-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON) ... See More ⇒

 6.1. Size:261K  utc
 ut100n03-q.pdf pdf_icon

UT100N03G-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m @VGS=10 V * RDS(ON) = 8.0m @VGS=4.... See More ⇒

 6.2. Size:268K  utc
 ut100n03.pdf pdf_icon

UT100N03G-TQ2-T

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Detailed specifications: UT100N03G-TF3-T, UT100N03L-TM3-T, UT100N03G-TM3-T, UT100N03L-TN3-R, UT100N03G-TN3-R, UT100N03L-TND-R, UT100N03G-TND-R, UT100N03L-TQ2-T, AON6414A, UT100N03L-TQ2-R, UT100N03G-TQ2-R, UT100N03G-K08-5060-R, UT20N03L-TN3-R, UT20N03G-TN3-R, UT20N03G-K08-5060-R, UT2301G-AE2-R, UT2302G-AE2-R

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.