UT2305G-AE2-R
MOSFET. Datasheet pdf. Equivalent
Type Designator: UT2305G-AE2-R
Marking Code: 23EG
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 4.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 36
nS
Cossⓘ -
Output Capacitance: 116
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053
Ohm
Package:
SOT23
UT2305G-AE2-R
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT2305G-AE2-R
Datasheet (PDF)
..1. Size:297K utc
ut2305l-ae2-r ut2305g-ae2-r ut2305l-ae3-r ut2305g-ae3-r ut2305l-al3-r ut2305g-ag3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve
..2. Size:294K utc
ut2305g-ae2-r ut2305g-ae3-r ut2305g-ag3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve
8.1. Size:300K utc
ut2305a.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2305A Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2305A is P-channel enhancement mode Power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
8.2. Size:297K utc
ut2305.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve
9.1. Size:183K utc
ut2301.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications su
9.2. Size:228K utc
ut2301g-ae2-r ut2301g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications s
9.3. Size:229K utc
ut2309.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT2309 is P-channel power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC
9.4. Size:236K utc
ut2306.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2306 is N-channel power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mountapplications and suited for low voltage applications such as
9.5. Size:269K utc
ut2302.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications andsuited for low voltage applications such as
9.6. Size:211K utc
ut2304.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2304 Power MOSFET N-CHANNEL ENHANCEMENT MODE 331 12 2 DESCRIPTION The UT2304 is an N-Channel Power MOSFET that can achieve SOT-23-3 SOT-23 (JEDEC TO-236) (EIAJ SC-59)the lowest possible on-resistance, extremely and cost- effectiveness device by using advanced trench technology. SYMBOL Drain1SOT-89GateSource ORDERING IN
9.7. Size:124K utc
ut2308.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2308 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2308 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mountapplications and suited for low voltage application
9.8. Size:159K utc
ut2301z.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorablestabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC co
9.9. Size:288K utc
ut2302g-ae2-r ut2302g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applicationsand suited for low voltage applications such a
9.10. Size:794K cn vbsemi
ut2301g-ae3-r.pdf
UT2301G-AE3-Rwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLIC
9.11. Size:1511K cn vbsemi
ut2302g-ae3.pdf
UT2302G-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
9.12. Size:911K cn vbsemi
ut2302l-ae3.pdf
UT2302L-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
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