UT2305G-AE3-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UT2305G-AE3-R
Marking Code: 23EG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 4.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 116 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOT23
UT2305G-AE3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT2305G-AE3-R Datasheet (PDF)
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