All MOSFET. UT2316G-AE3-R Datasheet

 

UT2316G-AE3-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT2316G-AE3-R
   Marking Code: 23SG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8(min) V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23

 UT2316G-AE3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT2316G-AE3-R Datasheet (PDF)

 ..1. Size:175K  utc
 ut2316g-ae2-r ut2316g-ae3-r.pdf

UT2316G-AE3-R UT2316G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switchingspeed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mountapplications and suited for low voltage applications such as DC/DC converters.

 8.1. Size:199K  utc
 ut2316.pdf

UT2316G-AE3-R UT2316G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switchingspeed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

 9.1. Size:155K  utc
 ut2312.pdf

UT2316G-AE3-R UT2316G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 m @VGS = 4.5 V * RDS(ON) = 40 m @VGS = 2

 9.2. Size:192K  utc
 ut2311.pdf

UT2316G-AE3-R UT2316G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3UT2311L-

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