UT2955G-AA3-R Datasheet and Replacement
Type Designator: UT2955G-AA3-R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: SOT223
UT2955G-AA3-R substitution
UT2955G-AA3-R Datasheet (PDF)
ut2955g-aa3-r ut2955l-tn3-r ut2955g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies. FEATURES * RDS(ON)
ut2955g.pdf
UT2955Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo
ut2955.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies. FEATURES * RDS(ON)
Datasheet: UT2305G-AE2-R , UT2305G-AE3-R , UT2305G-AG3-R , UT2305L-AE2-R , UT2305L-AE3-R , UT2305L-AL3-R , UT2316G-AE2-R , UT2316G-AE3-R , 8205A , UT2955L-TN3-R , UT2955G-TN3-R , UT3400L-AE2-R , UT3400G-AE2-R , UT3400L-AE3-R , UT3400G-AE3-R , UT3401G-AE3-R , UT3401ZL-AE3-R .
Keywords - UT2955G-AA3-R MOSFET datasheet
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