UT3N10L-AB3-R Specs and Replacement

Type Designator: UT3N10L-AB3-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: SOT89

UT3N10L-AB3-R substitution

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UT3N10L-AB3-R datasheet

 ..1. Size:385K  utc
 ut3n10l-aa3-r ut3n10g-aa3-r ut3n10l-ab3-r ut3n10g-ab3-r ut3n10l-ae3-r ut3n10g-ae3-r.pdf pdf_icon

UT3N10L-AB3-R

UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3 MODE POWER MOSFET 2 1 1 SOT-23 TO-252 (EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 1 1 SOT-89 SOT-223 FE... See More ⇒

 5.1. Size:385K  utc
 ut3n10l-ag6-r ut3n10g-ag6-r ut3n10l-tn3-r ut3n10g-tn3-r ut3n10l-k08-3030-r ut3n10g-k08-3030-r.pdf pdf_icon

UT3N10L-AB3-R

UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3 MODE POWER MOSFET 2 1 1 SOT-23 TO-252 (EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 1 1 SOT-89 SOT-223 FE... See More ⇒

Detailed specifications: UT3N06G-AB3-R, UT3N06G-AE3-R, UT3N06L-TM3-T, UT3N06G-TM3-T, UT3N06L-TN3-R, UT3N06G-TN3-R, UT3N10L-AA3-R, UT3N10G-AA3-R, BS170, UT3N10G-AB3-R, UT3N10L-AE3-R, UT3N10G-AE3-R, UT3N10L-AG6-R, UT3N10G-AG6-R, UT3N10L-TN3-R, UT3N10G-TN3-R, UT3N10L-K08-3030-R

Keywords - UT3N10L-AB3-R MOSFET specs

 UT3N10L-AB3-R cross reference

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 UT3N10L-AB3-R replacement

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