All MOSFET. UT3N10G-AE3-R Datasheet

 

UT3N10G-AE3-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT3N10G-AE3-R
   Marking Code: 3N10G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: SOT23

 UT3N10G-AE3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT3N10G-AE3-R Datasheet (PDF)

 ..1. Size:385K  utc
 ut3n10l-aa3-r ut3n10g-aa3-r ut3n10l-ab3-r ut3n10g-ab3-r ut3n10l-ae3-r ut3n10g-ae3-r.pdf

UT3N10G-AE3-R UT3N10G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3MODE POWER MOSFET 21 1SOT-23TO-252(EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 11SOT-89SOT-223 FE

 5.1. Size:385K  utc
 ut3n10l-ag6-r ut3n10g-ag6-r ut3n10l-tn3-r ut3n10g-tn3-r ut3n10l-k08-3030-r ut3n10g-k08-3030-r.pdf

UT3N10G-AE3-R UT3N10G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3MODE POWER MOSFET 21 1SOT-23TO-252(EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 11SOT-89SOT-223 FE

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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