UT3N10G-AE3-R Datasheet and Replacement
Type Designator: UT3N10G-AE3-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: SOT23
UT3N10G-AE3-R substitution
UT3N10G-AE3-R Datasheet (PDF)
ut3n10l-aa3-r ut3n10g-aa3-r ut3n10l-ab3-r ut3n10g-ab3-r ut3n10l-ae3-r ut3n10g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3MODE POWER MOSFET 21 1SOT-23TO-252(EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 11SOT-89SOT-223 FE
ut3n10l-ag6-r ut3n10g-ag6-r ut3n10l-tn3-r ut3n10g-tn3-r ut3n10l-k08-3030-r ut3n10g-k08-3030-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3MODE POWER MOSFET 21 1SOT-23TO-252(EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 11SOT-89SOT-223 FE
Datasheet: UT3N06G-TM3-T , UT3N06L-TN3-R , UT3N06G-TN3-R , UT3N10L-AA3-R , UT3N10G-AA3-R , UT3N10L-AB3-R , UT3N10G-AB3-R , UT3N10L-AE3-R , RFP50N06 , UT3N10L-AG6-R , UT3N10G-AG6-R , UT3N10L-TN3-R , UT3N10G-TN3-R , UT3N10L-K08-3030-R , UT3N10G-K08-3030-R , UT4404G-S08-R , UT4421G-S08-R .
History: APT20M34BFLL | TSM4946DCS | 2N60G-TND-R | JCS70N30ABC | VBZE40P06
Keywords - UT3N10G-AE3-R MOSFET datasheet
UT3N10G-AE3-R cross reference
UT3N10G-AE3-R equivalent finder
UT3N10G-AE3-R lookup
UT3N10G-AE3-R substitution
UT3N10G-AE3-R replacement
History: APT20M34BFLL | TSM4946DCS | 2N60G-TND-R | JCS70N30ABC | VBZE40P06
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